Zuhause / Single IGBTs / HGT1S12N60A4S9A
HGT1S12N60A4S9A
detaildesc

HGT1S12N60A4S9A

onsemi

Produkt-Nr.:

HGT1S12N60A4S9A

Hersteller:

onsemi

Paket:

D²PAK (TO-263)

Charge:

-

Datenblatt:

pdf

Beschreibung:

IGBT 600V 54A 167W TO263AB

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
Input Type Standard
Test Condition 390V, 12A, 10Ohm, 15V
Switching Energy 55µJ (on), 50µJ (off)
Current - Collector (Ic) (Max) 54 A
Mounting Type Surface Mount
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Td (on/off) @ 25°C 17ns/96ns
Supplier Device Package D²PAK (TO-263)
Current - Collector Pulsed (Icm) 96 A
Series -
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge 78 nC
Power - Max 167 W
Mfr onsemi
Package Tape & Reel (TR)
IGBT Type -
Base Product Number HGT1S12