GE12160CEA3
GE Aerospace
Produkt-Nr.:
GE12160CEA3
Hersteller:
Paket:
Module
Charge:
-
Datenblatt:
Beschreibung:
1200V 1425A SiC Half-Bridge
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
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Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (Tc) |
| FET Feature | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| Input Capacitance (Ciss) (Max) @ Vds | 90000pF @ 600V |
| Gate Charge (Qg) (Max) @ Vgs | 3744nC @ 18V |
| Mounting Type | Chassis Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 475A, 20V |
| Supplier Device Package | Module |
| Vgs(th) (Max) @ Id | 4.5V @ 480mA |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Series | SiC Power |
| Package / Case | Module |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 3.75kW (Tc) |
| Current - Continuous Drain (Id) @ 25°C | 1.425kA (Tc) |
| Mfr | GE Aerospace |
| Package | Bulk |
| Base Product Number | GE12160 |
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2000+Tägliches durchschnitt liches RFQ-Volumen
30,000,000Standard produkt einheit
2800+Weltweit Hersteller
15,000 ㎡Lager auf Lager
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