GCMS040B120S1-E1
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GCMS040B120S1-E1

SemiQ

Produkt-Nr.:

GCMS040B120S1-E1

Hersteller:

SemiQ

Paket:

SOT-227

Charge:

-

Datenblatt:

pdf

Beschreibung:

SIC 1200V 40M MOSFET & 15A SBD S

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3110 pF @ 1000 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 124 nC @ 20 V
Mounting Type Chassis Mount
Product Status Active
Rds On (Max) @ Id, Vgs 52mOhm @ 40A, 20V
Supplier Device Package SOT-227
Vgs(th) (Max) @ Id 4V @ 10mA
Drain to Source Voltage (Vdss) 1200 V
Series -
Power Dissipation (Max) 242W (Tc)
Package / Case SOT-227-4, miniBLOC
Technology SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C 57A (Tc)
Mfr SemiQ
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number GCMS040