GB35XF120K
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GB35XF120K

Vishay General Semiconductor - Diodes Division

Produkt-Nr.:

GB35XF120K

Paket:

-

Charge:

-

Datenblatt:

pdf

Beschreibung:

IGBT MODULE 1200V 50A 284W

Menge:

Lieferung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C (TJ)
NTC Thermistor No
Configuration Three Phase Inverter
Current - Collector (Ic) (Max) 50 A
Input Capacitance (Cies) @ Vce 3.475 nF @ 30 V
Mounting Type Chassis Mount
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 1200 V
Supplier Device Package -
Series -
Input Standard
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 50A
Package / Case ECONO2
Power - Max 284 W
Mfr Vishay General Semiconductor - Diodes Division
Current - Collector Cutoff (Max) 100 µA
IGBT Type NPT
Base Product Number GB35