G9435S
detaildesc

G9435S

Goford Semiconductor

Produkt-Nr.:

G9435S

Paket:

8-SOP

Charge:

-

Datenblatt:

pdf

Beschreibung:

P-30V,-5.1A,RD(MAX)<55M@-10V,VTH

Menge:

Lieferung:

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Zahlung:

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Auf Lager : 4000

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $0.418

    $0.418

  • 10

    $0.2983

    $2.983

  • 100

    $0.150385

    $15.0385

  • 500

    $0.133285

    $66.6425

  • 1000

    $0.103721

    $103.721

  • 2000

    $0.092834

    $185.668

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1040 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 55mOhm @ 5.1A, 10V
Supplier Device Package 8-SOP
Vgs(th) (Max) @ Id 3V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 2.5W (Ta)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.1A (Ta)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)