G75P04FI
Goford Semiconductor
Produkt-Nr.:
G75P04FI
Hersteller:
Paket:
TO-220F
Charge:
-
Datenblatt:
Beschreibung:
P-40V,-60A,RD(MAX)<7M@-10V,VTH-1
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
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Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 6275 pF @ 20 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Mounting Type | Through Hole |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 10A, 10V |
| Supplier Device Package | TO-220F |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain to Source Voltage (Vdss) | 40 V |
| Series | - |
| Power Dissipation (Max) | 89W (Tc) |
| Package / Case | TO-220-3 Full Pack |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Mfr | Goford Semiconductor |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tube |
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15,000 ㎡Lager auf Lager
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