FESB8GTHE3_A/P

Vishay General Semiconductor - Diodes Division

Produkt-Nr.:

FESB8GTHE3_A/P

Hersteller:

Paket:

TO-263AB (D²PAK)

Charge:

Datenblatt:

Beschreibung:

DIODE GEN PURP 400V 8A TO263AB

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Name des Kontakts

E-Mail

Firmenname

Land

Menge

Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	50 ns
Capacitance @ Vr, F	-
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	TO-263AB (D²PAK)
Current - Reverse Leakage @ Vr	10 µA @ 400 V
Series	Automotive, AEC-Q101
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 8 A
Mfr	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	400 V
Package	Tube
Current - Average Rectified (Io)	8A
Operating Temperature - Junction	-55°C ~ 150°C
Base Product Number	FESB8