FDM100-0045SP
detaildesc

FDM100-0045SP

IXYS

Produkt-Nr.:

FDM100-0045SP

Hersteller:

IXYS

Paket:

ISOPLUS i4-PAC™

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 55V 100A I4PAC

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Auf Lager : Bitte Anfrage

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 7.2mOhm @ 80A, 10V
Supplier Device Package ISOPLUS i4-PAC™
Vgs(th) (Max) @ Id 4V @ 1mA
Drain to Source Voltage (Vdss) 55 V
Series -
Power Dissipation (Max) -
Package / Case i4-Pac™-5
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Mfr IXYS
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number FDM100