DMP2006UFGQ-7
detaildesc

DMP2006UFGQ-7

Diodes Incorporated

Produkt-Nr.:

DMP2006UFGQ-7

Paket:

POWERDI3333-8

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET P-CH 20V PWRDI3333

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7500 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 5.5mOhm @ 15A, 4.5V
Supplier Device Package POWERDI3333-8
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series Automotive, AEC-Q101
Power Dissipation (Max) 2.3W (Ta), 41W (Tc)
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 17.5A (Ta), 40A (Tc)
Mfr Diodes Incorporated
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number DMP2006