BYM11-800HE3_A/H

Vishay General Semiconductor - Diodes Division

Produkt-Nr.:

BYM11-800HE3_A/H

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Paket:

DO-213AB

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Beschreibung:

DIODE GEN PURP 800V 1A DO213AB

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	500 ns
Capacitance @ Vr, F	15pF @ 4V, 1MHz
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	DO-213AB
Current - Reverse Leakage @ Vr	5 µA @ 800 V
Series	Automotive, AEC-Q101, Superectifier®
Package / Case	DO-213AB, MELF (Glass)
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 1 A
Mfr	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	800 V
Package	Tape & Reel (TR)
Current - Average Rectified (Io)	1A
Operating Temperature - Junction	-65°C ~ 175°C
Base Product Number	BYM11