APTM20UM09SG
detaildesc

APTM20UM09SG

Microsemi Corporation

Produkt-Nr.:

APTM20UM09SG

Paket:

Module

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 200V 195A MODULE

Menge:

Lieferung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 12300 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 217 nC @ 10 V
Mounting Type Chassis Mount
Product Status Discontinued at Digi-Key
Rds On (Max) @ Id, Vgs 9mOhm @ 74.5A, 10V
Supplier Device Package Module
Vgs(th) (Max) @ Id 5V @ 4mA
Drain to Source Voltage (Vdss) 200 V
Series -
Power Dissipation (Max) 780W (Tc)
Package / Case J3 Module
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Mfr Microsemi Corporation
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk