APTM120DA68T1G
Microsemi Corporation
Produkt-Nr.:
APTM120DA68T1G
Hersteller:
Paket:
SP1
Charge:
-
Datenblatt:
Beschreibung:
MOSFET N-CH 1200V 15A SP1
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 6696 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Mounting Type | Chassis Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 816mOhm @ 12A, 10V |
| Supplier Device Package | SP1 |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Drain to Source Voltage (Vdss) | 1200 V |
| Series | - |
| Power Dissipation (Max) | 357W (Tc) |
| Package / Case | SP1 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Mfr | Microsemi Corporation |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |
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