APT9M100S/TR
detaildesc

APT9M100S/TR

Microchip Technology

Produkt-Nr.:

APT9M100S/TR

Paket:

D3PAK

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET MOS8 1000 V 9 A TO-268

Menge:

Lieferung:

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Auf Lager : 400

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2605 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 1.4Ohm @ 5A, 10V
Supplier Device Package D3PAK
Vgs(th) (Max) @ Id 5V @ 1mA
Drain to Source Voltage (Vdss) 1000 V
Series POWER MOS 8™
Power Dissipation (Max) 335W (Tc)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Mfr Microchip Technology
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number APT9M100