AOW10T60P
detaildesc

AOW10T60P

Alpha & Omega Semiconductor Inc.

Produkt-Nr.:

AOW10T60P

Paket:

TO-262

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 600V 10A TO262

Menge:

Lieferung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1595 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 700mOhm @ 5A, 10V
Supplier Device Package TO-262
Vgs(th) (Max) @ Id 5V @ 250µA
Drain to Source Voltage (Vdss) 600 V
Series -
Power Dissipation (Max) 208W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Mfr Alpha & Omega Semiconductor Inc.
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number AOW10