2SK3132(Q)
detaildesc

2SK3132(Q)

Toshiba Semiconductor and Storage

Produkt-Nr.:

2SK3132(Q)

Paket:

TO-3P(L)

Charge:

-

Datenblatt:

pdf

Beschreibung:

MOSFET N-CH 500V 50A TO3P

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 280 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 95mOhm @ 25A, 10V
Supplier Device Package TO-3P(L)
Vgs(th) (Max) @ Id 3.4V @ 1mA
Drain to Source Voltage (Vdss) 500 V
Series -
Power Dissipation (Max) 250W (Tc)
Package / Case TO-3PL
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 50A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number 2SK3132