2SJ304(F)
Toshiba Semiconductor and Storage
Produkt-Nr.:
2SJ304(F)
Hersteller:
Paket:
TO-220NIS
Charge:
-
Datenblatt:
Beschreibung:
MOSFET P-CH 60V 14A TO220NIS
Menge:
Lieferung:
Zahlung:
Auf Lager : Bitte Anfrage
Bitte senden Sie RFQ, wir werden sofort antworten.
Produkt informationen
Parameter-Info
Benutzer handbuch
| Operating Temperature | 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 7A, 10V |
| Supplier Device Package | TO-220NIS |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Series | - |
| Power Dissipation (Max) | 40W (Tc) |
| Package / Case | TO-220-3 Full Pack |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Mfr | Toshiba Semiconductor and Storage |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Package | Bulk |
| Base Product Number | 2SJ304 |
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