1N3611US/TR
detaildesc

1N3611US/TR

Microchip Technology

Produkt-Nr.:

1N3611US/TR

Paket:

A, SQ-MELF

Charge:

-

Datenblatt:

pdf

Beschreibung:

DIODE GEN PURP 200V 1A A SQ-MELF

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Auf Lager : Bitte Anfrage

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Produkt informationen

Parameter-Info

Benutzer handbuch

Speed Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F -
Mounting Type Surface Mount
Product Status Active
Supplier Device Package A, SQ-MELF
Current - Reverse Leakage @ Vr 1 µA @ 200 V
Series -
Package / Case SQ-MELF, A
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A
Mfr Microchip Technology
Voltage - DC Reverse (Vr) (Max) 200 V
Package Tape & Reel (TR)
Current - Average Rectified (Io) 1A
Operating Temperature - Junction -65°C ~ 175°C