US5U3TR

Rohm Semiconductor

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US5U3TR

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Package:

TUMT5

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Description:

MOSFET N-CH 30V 1.5A TUMT5

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Operating Temperature	150°C (TJ)
FET Feature	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds	80 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.2 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	240mOhm @ 1.5A, 4.5V
Supplier Device Package	TUMT5
Vgs(th) (Max) @ Id	1.5V @ 1mA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	1W (Ta)
Package / Case	6-SMD (5 Leads), Flat Lead
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	US5U3