ES6U1T2R

Rohm Semiconductor

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ES6U1T2R

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Package:

6-WEMT

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Description:

MOSFET P-CH 12V 1.3A 6WEMT

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Operating Temperature	150°C (TJ)
FET Feature	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 6 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	2.4 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	260mOhm @ 1.3A, 4.5V
Supplier Device Package	6-WEMT
Vgs(th) (Max) @ Id	1V @ 1mA
Drain to Source Voltage (Vdss)	12 V
Series	-
Power Dissipation (Max)	700mW (Ta)
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.3A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)