TPH3207WS
detaildesc

TPH3207WS

Transphorm

Product No:

TPH3207WS

Manufacturer:

Transphorm

Package:

TO-247-3

Batch:

-

Datasheet:

pdf

Description:

GANFET N-CH 650V 50A TO247-3

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2197 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 8 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 41mOhm @ 32A, 8V
Supplier Device Package TO-247-3
Vgs(th) (Max) @ Id 2.65V @ 700µA
Drain to Source Voltage (Vdss) 650 V
Series -
Power Dissipation (Max) 178W (Tc)
Package / Case TO-247-3
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Mfr Transphorm
Vgs (Max) ±18V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube