TP65H480G4JSG-TR

Transphorm

Product No:

TP65H480G4JSG-TR

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Package:

3-PQFN (5x6)

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Datasheet:

Description:

GANFET N-CH 650V 3.6A 3PQFN

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In Stock : 3000

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 8 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	560mOhm @ 3.4A, 8V
Supplier Device Package	3-PQFN (5x6)
Vgs(th) (Max) @ Id	2.8V @ 500µA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	13.2W (Tc)
Package / Case	3-SMD, Flat Lead
Technology	GaNFET (Cascode Gallium Nitride FET)
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)
Mfr	Transphorm
Vgs (Max)	±18V
Drive Voltage (Max Rds On, Min Rds On)	8V
Package	Tape & Reel (TR)
Base Product Number	TP65H480