TP65H070LDG-TR
detaildesc

TP65H070LDG-TR

Transphorm

Product No:

TP65H070LDG-TR

Manufacturer:

Transphorm

Package:

3-PQFN (8x8)

Batch:

-

Datasheet:

-

Description:

650 V 25 A GAN FET

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 1230

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $11.9225

    $11.9225

  • 10

    $10.4994

    $104.994

  • 100

    $9.080385

    $908.0385

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 85mOhm @ 16A, 10V
Supplier Device Package 3-PQFN (8x8)
Vgs(th) (Max) @ Id 4.8V @ 700µA
Drain to Source Voltage (Vdss) 650 V
Series TP65H070L
Power Dissipation (Max) 96W (Tc)
Package / Case 3-PowerDFN
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Mfr Transphorm
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)