SPP80P06PHXKSA1

Infineon Technologies

Product No:

SPP80P06PHXKSA1

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Package:

PG-TO220-3-1

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Description:

MOSFET P-CH 60V 80A TO220-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	5033 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	173 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	23mOhm @ 64A, 10V
Supplier Device Package	PG-TO220-3-1
Vgs(th) (Max) @ Id	4V @ 5.5mA
Drain to Source Voltage (Vdss)	60 V
Series	SIPMOS®
Power Dissipation (Max)	340W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SPP80P06