BSC200P03LSG
detaildesc

BSC200P03LSG

Infineon Technologies

Product No:

BSC200P03LSG

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-6

Batch:

-

Datasheet:

-

Description:

P-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2430 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 48.5 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 20mOhm @ 12.5A, 10V
Supplier Device Package PG-TDSON-8-6
Vgs(th) (Max) @ Id 1V @ 100µA
Drain to Source Voltage (Vdss) 30 V
Series OptiMOS®
Power Dissipation (Max) 2.5W (Ta), 63W (Tc)
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 9.9A (Ta), 12.5A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk