SPD15P10PGBTMA1

Infineon Technologies

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SPD15P10PGBTMA1

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Package:

PG-TO252-3

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Description:

MOSFET P-CH 100V 15A TO252-3

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In Stock : 2380

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1280 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	240mOhm @ 10.6A, 10V
Supplier Device Package	PG-TO252-3
Vgs(th) (Max) @ Id	2.1V @ 1.54mA
Drain to Source Voltage (Vdss)	100 V
Series	Automotive, AEC-Q101, SIPMOS®
Power Dissipation (Max)	128W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	SPD15P10