SPD08P06PGBTMA1

Infineon Technologies

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SPD08P06PGBTMA1

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Package:

PG-TO252-3

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Description:

MOSFET P-CH 60V 8.83A TO252-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	420 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	300mOhm @ 10A, 6.2V
Supplier Device Package	PG-TO252-3
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	SIPMOS®
Power Dissipation (Max)	42W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8.83A (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6.2V
Package	Tape & Reel (TR)
Base Product Number	SPD08P06