SCT3160KLHRC11

Rohm Semiconductor

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SCT3160KLHRC11

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Package:

TO-247N

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Description:

SICFET N-CH 1200V 17A TO247N

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Operating Temperature	175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	398 pF @ 800 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 18 V
Mounting Type	Through Hole
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	208mOhm @ 5A, 18V
Supplier Device Package	TO-247N
Vgs(th) (Max) @ Id	5.6V @ 2.5mA
Drain to Source Voltage (Vdss)	1200 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	103W
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	+22V, -4V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCT3160