SCT3120AW7TL
detaildesc

SCT3120AW7TL

Rohm Semiconductor

Product No:

SCT3120AW7TL

Manufacturer:

Rohm Semiconductor

Package:

TO-263-7

Batch:

-

Datasheet:

pdf

Description:

SICFET N-CH 650V 21A TO263-7

Quantity:

Delivery:

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Payment:

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In Stock : 848

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $10.0795

    $10.0795

  • 10

    $8.8768

    $88.768

  • 100

    $7.67752

    $767.752

  • 500

    $6.957762

    $3478.881

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 500 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 18 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 156mOhm @ 6.7A, 18V
Supplier Device Package TO-263-7
Vgs(th) (Max) @ Id 5.6V @ 3.33mA
Drain to Source Voltage (Vdss) 650 V
Series -
Power Dissipation (Max) 100W
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Mfr Rohm Semiconductor
Vgs (Max) +22V, -4V
Package Tape & Reel (TR)
Base Product Number SCT3120