SCT3030ALGC11

Rohm Semiconductor

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SCT3030ALGC11

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Package:

TO-247N

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Description:

SICFET N-CH 650V 70A TO247N

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Operating Temperature	175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1526 pF @ 500 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	104 nC @ 18 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	39mOhm @ 27A, 18V
Supplier Device Package	TO-247N
Vgs(th) (Max) @ Id	5.6V @ 13.3mA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	262W (Tc)
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	+22V, -4V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCT3030