SCT3022ALGC11

Rohm Semiconductor

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SCT3022ALGC11

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Package:

TO-247N

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Description:

SICFET N-CH 650V 93A TO247N

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In Stock : 1995

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Operating Temperature	175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2208 pF @ 500 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	133 nC @ 18 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	28.6mOhm @ 36A, 18V
Supplier Device Package	TO-247N
Vgs(th) (Max) @ Id	5.6V @ 18.2mA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	339W (Tc)
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	93A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	+22V, -4V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCT3022