SCT2H12NYTB
Rohm Semiconductor
Product No:
SCT2H12NYTB
Manufacturer:
Package:
TO-268
Batch:
-
Datasheet:
Description:
SICFET N-CH 1700V 4A TO268
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry
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Product Information
Parameter Info
User Guide
| Operating Temperature | 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 184 pF @ 800 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 18 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 18V |
| Supplier Device Package | TO-268 |
| Vgs(th) (Max) @ Id | 4V @ 410µA |
| Drain to Source Voltage (Vdss) | 1700 V |
| Series | - |
| Power Dissipation (Max) | 44W (Tc) |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Mfr | Rohm Semiconductor |
| Vgs (Max) | +22V, -6V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Package | Tape & Reel (TR) |
| Base Product Number | SCT2H12 |
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