SCT2280KEC
detaildesc

SCT2280KEC

Rohm Semiconductor

Product No:

SCT2280KEC

Manufacturer:

Rohm Semiconductor

Package:

TO-247

Batch:

-

Datasheet:

pdf

Description:

SICFET N-CH 1200V 14A TO247

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 667 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 18 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 364mOhm @ 4A, 18V
Supplier Device Package TO-247
Vgs(th) (Max) @ Id 4V @ 1.4mA
Drain to Source Voltage (Vdss) 1200 V
Series -
Power Dissipation (Max) 108W (Tc)
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Mfr Rohm Semiconductor
Vgs (Max) +22V, -6V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tube
Base Product Number SCT2280