RW1C026ZPT2CR

Rohm Semiconductor

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RW1C026ZPT2CR

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Package:

6-WEMT

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Description:

MOSFET P-CH 20V 2.5A 6WEMT

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1250 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	70mOhm @ 2.5A, 4.5V
Supplier Device Package	6-WEMT
Vgs(th) (Max) @ Id	1V @ 1mA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	700mW (Ta)
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	RW1C026