RV4C020ZPHZGTCR1

Rohm Semiconductor

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RV4C020ZPHZGTCR1

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Package:

DFN1616-6W

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Description:

PCH -20V -2.0A SMALL SIGNAL MOSF

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	80 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	2 nC @ 4.5 V
Mounting Type	Surface Mount, Wettable Flank
Product Status	Active
Rds On (Max) @ Id, Vgs	260mOhm @ 2A, 4.5V
Supplier Device Package	DFN1616-6W
Vgs(th) (Max) @ Id	1.3V @ 1mA
Drain to Source Voltage (Vdss)	20 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	1.5W (Ta)
Package / Case	6-PowerWFDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	RV4C020