RS1E350BNTB1
detaildesc

RS1E350BNTB1

Rohm Semiconductor

Product No:

RS1E350BNTB1

Manufacturer:

Rohm Semiconductor

Package:

8-HSOP

Batch:

-

Datasheet:

pdf

Description:

NCH 30V 80A POWER MOSFET: RS1E35

Quantity:

Delivery:

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Payment:

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In Stock : 2465

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.9165

    $2.9165

  • 10

    $2.0634

    $20.634

  • 100

    $1.689955

    $168.9955

  • 500

    $1.424658

    $712.329

  • 1000

    $1.306763

    $1306.763

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7900 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 1.7mOhm @ 35A, 10V
Supplier Device Package 8-HSOP
Vgs(th) (Max) @ Id 2.5V @ 1mA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 3W (Ta), 35W (Tc)
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 35A (Ta), 80A (Tc)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number RS1E