RQ3L070BGTB1

Rohm Semiconductor

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RQ3L070BGTB1

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Package:

8-HSMT (3.2x3)

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Description:

NCH 60V 20A, HSMT8G, POWER MOSFE

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	460 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.6 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	24.7mOhm @ 7A, 10V
Supplier Device Package	8-HSMT (3.2x3)
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	2W (Ta), 15W (Tc)
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	7A (Ta), 20A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)