RJ1L08CGNTLL

Rohm Semiconductor

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RJ1L08CGNTLL

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Package:

LPTL

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Description:

MOSFET N-CH 60V 80A LPTL

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2600 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	7.7mOhm @ 80A, 10V
Supplier Device Package	LPTL
Vgs(th) (Max) @ Id	2.5V @ 50µA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	96W (Ta)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RJ1L08