RHU002N06T106

Rohm Semiconductor

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RHU002N06T106

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Package:

UMT3

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Description:

MOSFET N-CH 60V 200MA UMT3

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	15 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.4 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	2.4Ohm @ 200mA, 10V
Supplier Device Package	UMT3
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	200mW (Ta)
Package / Case	SC-70, SOT-323
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	RHU002