RH6P040BHTB1

Rohm Semiconductor

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RH6P040BHTB1

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Package:

8-HSMT (3.2x3)

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Description:

NCH 100V 40A, HSMT8, POWER MOSFE

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1080 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16.7 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	15.6mOhm @ 40A, 10V
Supplier Device Package	8-HSMT (3.2x3)
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	59W (Tc)
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)