RF4P060BGTCR
detaildesc

RF4P060BGTCR

Rohm Semiconductor

Product No:

RF4P060BGTCR

Manufacturer:

Rohm Semiconductor

Package:

DFN2020-8S

Batch:

-

Datasheet:

pdf

Description:

NCH 100V 6A, HUML2020L8, POWER M

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 305 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 53mOhm @ 6A, 10V
Supplier Device Package DFN2020-8S
Vgs(th) (Max) @ Id 2.5V @ 1mA
Drain to Source Voltage (Vdss) 100 V
Series -
Power Dissipation (Max) 2W (Ta)
Package / Case 8-PowerUDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number RF4P060