RCJ331N25TL

Rohm Semiconductor

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RCJ331N25TL

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Package:

TO-263S

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Description:

250V 33A, NCH, TO-263S, POWER MO

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In Stock : 2000

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4500 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	105mOhm @ 16.5A, 10V
Supplier Device Package	TO-263S
Vgs(th) (Max) @ Id	5V @ 1mA
Drain to Source Voltage (Vdss)	250 V
Series	-
Power Dissipation (Max)	1.56W (Ta), 211W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	RCJ331