IPP80N08S406AKSA1

Infineon Technologies

Product No:

IPP80N08S406AKSA1

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Package:

PG-TO220-3-1

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Description:

MOSFET N-CH 80V 80A TO220-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4800 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Mounting Type	Through Hole
Product Status	Last Time Buy
Rds On (Max) @ Id, Vgs	5.8mOhm @ 80A, 10V
Supplier Device Package	PG-TO220-3-1
Vgs(th) (Max) @ Id	4V @ 90µA
Drain to Source Voltage (Vdss)	80 V
Series	Automotive, AEC-Q101, OptiMOS™
Power Dissipation (Max)	150W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPP80N08