IPB80P04P4L08ATMA2

Infineon Technologies

Product No:

IPB80P04P4L08ATMA2

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Package:

PG-TO263-3-2

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Description:

MOSFET P-CH 40V 80A TO263-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	5430 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	8.2mOhm @ 80A, 10V
Supplier Device Package	PG-TO263-3-2
Vgs(th) (Max) @ Id	2.2V @ 120µA
Drain to Source Voltage (Vdss)	40 V
Series	OptiMOS®-P2
Power Dissipation (Max)	75W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	+5V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPB80P