IPB80N04S3-04
detaildesc

IPB80N04S3-04

Infineon Technologies

Product No:

IPB80N04S3-04

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-1

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 40V 80A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 225

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 225

    $1.349

    $303.525

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5200 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 4.1mOhm @ 80A, 10V
Supplier Device Package PG-TO263-3-1
Vgs(th) (Max) @ Id 4V @ 90µA
Drain to Source Voltage (Vdss) 40 V
Series Automotive, AEC-Q101, OptiMOS™
Power Dissipation (Max) 136W (Tc)
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Package Bulk