TP65H150BG4JSG-TR
detaildesc

TP65H150BG4JSG-TR

Transphorm

Product No:

TP65H150BG4JSG-TR

Manufacturer:

Transphorm

Package:

8-PQFN (5x6)

Batch:

-

Datasheet:

-

Description:

GANFET N-CH 650V 13A QFN5X6

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 3953

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.762

    $3.762

  • 10

    $3.1597

    $31.597

  • 100

    $2.55607

    $255.607

  • 500

    $2.272096

    $1136.048

  • 1000

    $1.945486

    $1945.486

  • 2000

    $1.831876

    $3663.752

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 4.9 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 6V
Supplier Device Package 8-PQFN (5x6)
Vgs(th) (Max) @ Id 2.8V @ 500µA
Drain to Source Voltage (Vdss) 650 V
Series SuperGaN®
Power Dissipation (Max) 83W (Tc)
Package / Case 8-PowerTDFN
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Mfr Transphorm
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 6V
Package Tape & Reel (TR)