TP65H070G4PS

Transphorm

Product No:

TP65H070G4PS

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Package:

TO-220AB

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Description:

GANFET N-CH 650V 29A TO220

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	638 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	85mOhm @ 18A, 10V
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	4.7V @ 700µA
Drain to Source Voltage (Vdss)	650 V
Series	SuperGaN®
Power Dissipation (Max)	96W (Tc)
Package / Case	TO-220-3
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Mfr	Transphorm
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube