TP65H015G5WS
detaildesc

TP65H015G5WS

Transphorm

Product No:

TP65H015G5WS

Manufacturer:

Transphorm

Package:

TO-247-3

Batch:

-

Datasheet:

pdf

Description:

650 V 95 A GAN FET

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 69

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $30.647

    $30.647

  • 10

    $27.23365

    $272.3365

  • 100

    $23.81954

    $2381.954

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5218 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 18mOhm @ 60A, 10V
Supplier Device Package TO-247-3
Vgs(th) (Max) @ Id 4.8V @ 2mA
Drain to Source Voltage (Vdss) 650 V
Series SuperGaN™
Power Dissipation (Max) 266W (Tc)
Package / Case TO-247-3
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 93A (Tc)
Mfr Transphorm
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube