SPB80N03S2L05
Infineon Technologies
Product No:
SPB80N03S2L05
Manufacturer:
Package:
PG-TO263-2
Batch:
-
Datasheet:
-
Description:
80A, 30V, N-CHANNEL, MOSFET
Quantity:
Delivery:
Payment:
In Stock : 72559
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
799
$0.361
$288.439
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3320 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 89.7 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 55A, 10V |
| Supplier Device Package | PG-TO263-2 |
| Vgs(th) (Max) @ Id | 2V @ 110µA |
| Drain to Source Voltage (Vdss) | 30 V |
| Series | CoolMOS™ |
| Power Dissipation (Max) | 167W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Bulk |
Recommended Parts
SPB80N03S2L05 Related Blog
Purchase must see! Electronic component selection from entry to give up
2025-09-25 63
Basic knowledge of crystal vibration, circuit design, non-vibration reasons, circuit principle, crystal frequency, digital circuit application (crystal vibration data download)
2024-04-08 120
Order transfer! A 30-year old Hong Kong-owned PCB factory in Shenzhen was sold
2024-02-22 69
New product release | Daoheshun infrared methane sensor, guarding the "last pass" of gas safety
2024-02-22 57
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
CopyRight © 道合顺 2013 - 2022 粤ICP备18104022号 粤公网安备 44030402004525号