SPB11N60C3ATMA1

Infineon Technologies

Product No:

SPB11N60C3ATMA1

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Package:

PG-TO263-3-2

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Description:

MOSFET N-CH 650V 11A TO263-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	380mOhm @ 7A, 10V
Supplier Device Package	PG-TO263-3-2
Vgs(th) (Max) @ Id	3.9V @ 500µA
Drain to Source Voltage (Vdss)	650 V
Series	CoolMOS™
Power Dissipation (Max)	125W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	SPB11N60