SPB02N60S5ATMA1
Infineon Technologies
Product No:
SPB02N60S5ATMA1
Manufacturer:
Package:
PG-TO263-3-2
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 600V 1.8A TO263-3
Quantity:
Delivery:
Payment:
In Stock : 87
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.6365
$0.6365
10
$0.52535
$5.2535
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
| Supplier Device Package | PG-TO263-3-2 |
| Vgs(th) (Max) @ Id | 5.5V @ 80µA |
| Drain to Source Voltage (Vdss) | 600 V |
| Series | CoolMOS™ |
| Power Dissipation (Max) | 25W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SPB02N |
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